Published April 15, 1984
| Version v1
Journal article
Mechanism for dynamic annealing during high flux ion irradiation in Si
Creators
- 1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Description
The results of high current density implantation of Si and As ions are presented. Significant lattice recovery during implantation is shown to occur as a result of ''dynamic'' or self-annealing processes. The mechanism for these processes will be discussed. Also, the morphology of the residual damage is shown to depend critically upon the mass of the implanted ion and the current density
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 44
- Journal Issue
- 8
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 758-760
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 15058518
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ARSENIC IONS; CURRENT DENSITY; EPITAXY; ION IMPLANTATION; MORPHOLOGICAL CHANGES; SILICON; SILICON IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; HEAT TREATMENTS; IONS; SEMIMETALS