Published June 1, 2001 | Version v1
Journal article

Surface photovoltage effect on clean and negative electron-affinity surfaces of GaAs and its superlattice

  • 1. Department of Structural Molecular Science, Graduate University for Advanced Studies, Okazaki 444-8585 (Japan)
  • 2. UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585 (Japan)
  • 3. Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

Description

Photoelectron spectroscopy with the combination of synchrotron radiation and laser has been used for exploring the surface photovoltage effect of GaAs photocathodes. It has been observed that the laser induced surface photovoltage causes core-level shifts of photoelectron spectra without any spectral change. The surface photovoltage effects for core-levels and its temporal profiles on clean and negative electron-affinity surfaces of GaAs (100) and GaAs/GaAsP superlattice are reported

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
570
Journal Issue
1
Journal Page Range
p. 1000-1002
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
14. international spin physics symposium
Acronym
SPIN 2000
Dates
16-21 Oct 2000
Place
Osaka (Japan)

Optional Information

Notes
(c) 2001 American Institute of Physics.