Published 2003 | Version v1
Miscellaneous Metadata-only

Investigation of high-energy neutron SEE on FLASHROM

Creators

  • 1. China Academy of Engineering Physics, Mianyang (China). Inst. of Electronic Engineering
  • 2. Lanzhou Univ., Lanzhou (China)

Description

The high-energy neutron SEE on FLASHROM and testing methods were reported in the paper. 14 MeV neutron from T(d,n) is used for irradiating FLASHROM. Testing is done at neutron generator of Lanzhou University. The memory upset is observed and closed data is recorded. Finally the paper estimate closed cross section

Part of:
Proceedings of the 11th national conference on nuclear electronics and nuclear detection technology

Additional details

Additional titles

Augmented title (English)
The SEE is stated for Single Event Effect

Publishing Information

Imprint Title
Proceedings of the 11th national conference on nuclear electronics and nuclear detection technology
Imprint Pagination
598 p.
Journal Page Range
p. 456-459

Conference

Title
11. national conference on nuclear electronics and nuclear detection technology
Dates
1-6 Dec 2002
Place
Xiamen (China)

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
35048912
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
IRRADIATION; MEV RANGE 10-100; NEUTRON FLUENCE; NEUTRON GENERATORS; NEUTRONS; RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; TESTING
Descriptors DEC
BARYONS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; MEMORY DEVICES; MEV RANGE; NEUTRON SOURCES; NUCLEONS; PARTICLE SOURCES; RADIATION SOURCES; SEMICONDUCTOR DEVICES

Optional Information