Evaluation of a new Ba precursor, Ba(DPM)2-2tetraen, for MOCVD of oxide superconductors

Metalorganic sources of Ba are very important in preparing perovskite thin films by metalorganic chemical vapor deposition (MOCVD). We evaluated a new Ba precursor, Ba(DPM)2-2tetraen. It has a much higher volatility than conventional Ba(DPM)2. The supply rate of Ba can be kept constant for 130 h, by optimizing the MOCVD conditions. Using this precursor, high-quality YBa2Cu3Ox thin films were grown, with Tc > 80 K, good crystallinity (Rutherford backscattering spectroscopy, χmin = 2.6%) and good surface morphology with no precipitates. (orig.)