Published January 1, 2012
| Version v1
Journal article
Nanoscale mechanically induced structural and electrical changes in Ge2Sb2Te5 films
- 1. Instituto de Ciencia de Materiales de Sevilla, CSIC-Universidad de Sevilla, Avenida Americo Vespucio 49, 41092 -Seville (Spain)
Description
We demonstrate that the microstructure and electrical properties of Ge2Sb2Te5 films can be changed by a nanoscale mechanical process. Nanoscratching is used to define modified areas onto an as-deposited crystalline Ge2Sb2Te5 film. Scanning tunneling microscopy measurements show that the modified areas have a very low electrical conductivity. Micro-Raman measurements indicate that the mechanically induced microstructural changes are consistent with a phase transformation from crystalline to amorphous, which can be reversed by laser irradiation.
Additional details
Identifiers
- DOI
- 10.1063/1.3673592;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 111
- Journal Issue
- 1
- Journal Page Range
- p. 016101-016101.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129221
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ANTIMONIDES; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GERMANIUM TELLURIDES; LASER RADIATION; MICROSTRUCTURE; NANOSTRUCTURES; RAMAN SPECTRA; SCANNING TUNNELING MICROSCOPY; THIN FILMS
- Descriptors DEC
- ANTIMONY COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; FILMS; GERMANIUM COMPOUNDS; MICROSCOPY; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- (c) 2012 American Institute of Physics