Published January 20, 2014
| Version v1
Journal article
Current induced perpendicular-magnetic-anisotropy racetrack memory with magnetic field assistance
- 1. UMR8622, CNRS, Orsay 91405 (France)
- 2. IEF, University of Paris-Sud, Orsay 91405 (France)
- 3. Electronics and Information Engineering School, University of Beihang, Beijing 100191 (China)
Description
High current density is indispensable to shift domain walls (DWs) in magnetic nanowires, which limits the using of racetrack memory (RM) for low power and high density purposes. In this paper, we present perpendicular-magnetic-anisotropy (PMA) Co/Ni RM with global magnetic field assistance, which lowers the current density for DW motion. By using a compact model of PMA RM and 40 nm design kit, we perform mixed simulation to validate the functionality of this structure and analyze its density potential. Stochastic DW motion behavior has been taken into account and statistical Monte-Carlo simulations are carried out to evaluate its reliability performance
Additional details
Identifiers
- DOI
- 10.1063/1.4863081;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 3
- Journal Page Range
- p. 032409-032409.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45101944
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANISOTROPY; COBALT; COMPUTERIZED SIMULATION; CURRENT DENSITY; DOMAIN STRUCTURE; INTERFACES; MAGNETIC FIELDS; MONTE CARLO METHOD; NICKEL; POTENTIALS; QUANTUM WIRES; STOCHASTIC PROCESSES
- Descriptors DEC
- CALCULATION METHODS; ELEMENTS; METALS; NANOSTRUCTURES; SIMULATION; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC