Published January 10, 2005
| Version v1
Journal article
Atomistic processes during nanoindentation of amorphous silicon carbide
- 1. Collaboratory for Advanced Computing and Simulations, Department of Materials Science, Department of Physics, and Department of Computer Science, University of Southern California, Los Angeles, California 90089-0242 (United States)
- 2. Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706-1595 (United States)
Description
Atomistic mechanisms of nanoindentation of a-SiC have been studied by molecular dynamics simulations. The load displacement curve exhibits a series of load drops, reflecting the short-range topological order similar to crystalline 3C-SiC. In contrast to 3C-SiC, the load drops are irregularly spaced and less pronounced. The damage is spatially more extended than in 3C-SiC, and it exhibits long-range oscillations consistent with the indenter size. Hardness is ∼60% lower than in 3C-SiC and is in agreement with experiment. The onset of plastic deformation occurs at depth ∼75% lower than in 3C-SiC
Additional details
Identifiers
- DOI
- 10.1063/1.1849843;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 86
- Journal Issue
- 2
- Journal Page Range
- p. 021915-021915.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36080264
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; DEFORMATION; HARDNESS; MOLECULAR DYNAMICS METHOD; OSCILLATIONS; SILICON CARBIDES; SIMULATION; TOPOLOGY
- Descriptors DEC
- CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; MATHEMATICS; MECHANICAL PROPERTIES; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2005 American Institute of Physics