Published November 29, 2010
| Version v1
Journal article
Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level
- 1. School of Information and Communication Technology, KTH (Royal Institute of Technology), Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)
Description
SiGe (C)/Si(C) multiquantum wells have been studied as a thermistor material for future bolometers. A thermistor material for uncooled Si-based thermal detectors with thermal coefficient of resistance of 4.5%/K for 100x100 μm2 pixel sizes and low noise constant (K1/f) value of 4.4x10-15 is presented. The outstanding performance of the devices is due to Ni-silicide contacts, smooth interfaces, and high quality multiquantum wells containing high Ge content.
Additional details
Identifiers
- DOI
- 10.1063/1.3524211;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 97
- Journal Issue
- 22
- Journal Page Range
- p. 223507-223507.2
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42108844
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BACKSCATTERING; BOLOMETERS; CARBON ADDITIONS; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; EPITAXY; GERMANIUM ALLOYS; GERMANIUM SILICIDES; MASS SPECTRA; MONOCRYSTALS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICON; SILICON ALLOYS; THERMISTORS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CHEMICAL COATING; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DEPOSITION; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; GERMANIUM COMPOUNDS; IONIZING RADIATIONS; MATERIALS; MEASURING INSTRUMENTS; MICROSCOPY; NANOSTRUCTURES; RADIATIONS; SCATTERING; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; SPECTRA; SURFACE COATING
Optional Information
- Notes
- (c) 2010 American Institute of Physics