Depth distribution of vacancies generating under accelerated ion flux irradiation of solid surface

Analytical dependences of the dose of the absorbed primary particle flux and the dose of the absorbed primary particle energy on the depth for solid of finite or semi-infinite thickness are obtained on the basis of the kinetic transport theory for the case of the accelerated ion (atom) flux irradiation of a solid surface. The comparison with experimental data is conducted for silicon films at the thickness of 50, 100 and 400 nm irradiated by boron ion beams at the energy of 10 and 20 keV. The established regularities were used for calculating the depth distribution of vacancies generating in solids under irradiation of solids surfaces by accelerated ion beams