Published April 3, 2020 | Version v1
Journal article

Change in the electronic structure of the bismuth chalcogenide superconductor CsBi4−xPbxTe6 by dissociation of the bismuth dimers

  • 1. Takasaki Advanced Radiation Research Institute, National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292 (Japan)
  • 2. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  • 3. School of Physics and Astronomy, Cardiff University, Queen's Building, The Parade, Cardiff, CF24 3AA (United Kingdom)
  • 4. Research Institute for Interdisciplinary Science (RIIS), Okayama University, Okayama 700-3537 (Japan)

Description

CsBi4−xPbxTe6 is synthesized and the superconductivity associated with the structural transition from Pb substitution is studied. Photoemission spectroscopy measurements are performed in order to elucidate the relationship between the electronic structure and the occurrence of the superconductivity. When Bi is substituted with Pb, an electron doping-like change in the electronic structure is directly observed which is contrary to the naive expectation of hole doping. This observation is consistent with band structure calculations and appears to be a unique characteristic of CsBi4−xPbxTe6 because of the dissociation of Bi dimers upon Pb substitution. These results indicate that it may be possible to control the electron and hole doping via manipulating the Bi dimers through Pb substitution. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-648X/ab5e1a

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
32
Journal Issue
14
Journal Page Range
[7 p.]
ISSN
0953-8984
CODEN
JCOMEL