Frequency control of a spin-torque oscillator using magnetostrictive anisotropy
- 1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
- 2. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)
Description
We report the working principle of a spin-torque oscillator, of which the frequency is efficiently controlled by manipulating the magnetostrictive anisotropy. To justify the scheme, we simulate a conventional magnetic-tunnel junction-based oscillator which is fabricated on a piezoelectric material. By applying mechanical stress to a free layer using a piezoelectric material, the oscillation frequency can be controlled to ensure a broad tuning range without a significant reduction of the dynamic resistance variation. Such controllability, which appears in the absence of an external magnetic field, will not only enable the integration of spin-torque oscillators and conventional complimentary metal-oxide semiconductor technology but will also broaden the applicability of spin-torque oscillators
Additional details
Identifiers
- DOI
- 10.1063/1.4939743;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 2
- Journal Page Range
- p. 023504-023504.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47059371
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ANISOTROPY; FREQUENCY CONTROL; MAGNETIC FIELDS; MAGNETOSTRICTION; OSCILLATORS; OXIDES; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS; SPIN; TUNNEL EFFECT
- Descriptors DEC
- ANGULAR MOMENTUM; CHALCOGENIDES; CONTROL; ELECTRICITY; ELECTRONIC EQUIPMENT; EQUIPMENT; MAGNETIC PROPERTIES; MATERIALS; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES
Optional Information
- Notes
- (c) 2016 AIP Publishing LLC