High Tc superconducting infrared bolometric detector
Creators
- 1. Honeywell Inc., Sensor and System Development Center, Bloomington, MN (United States)
Description
Bolometric detection is based upon the absorption of radiation and conversion of this radiative power to a temperature rise via a thermally isolated structure. A resistance change in a temperature-sensitive element on the structure is then used to convert the temperature rise to an output signal. Two recent technology developments have the potential for revolutionizing the performance of this very old detector technology. First, the development of the YBaCuO high-temperature superconductor (HTS) technology has made it possible to achieve high-sensitivity thin-film resistors that can operate at or above liquid nitrogen (LN) temperatures. Second, the development of Si micro-machining technology has made it possible to go beyond the early, large, single-element bolometers consisting of resistors thermally isolated via wires. It is now possible to form arrays of small thin-film-based bolometeric pixels integrated onto Si substrates containing both array addressing and readout electronics. The combination of these two technology advances has made bolometer technology a potentially low-cost, high-sensitivity, high-yield staring detector technology for the near future. In this paper the authors describe the basic performance aspects of an IR microbolometer, the design of a high-performance pixel, and performance measurements on some initial devices. Finally the authors describe the potential performance of 2-D arrays
Additional details
Publishing Information
- Publisher
- Society of Petroleum Engineers.
- Imprint Place
- Richardson, TX (United States)
- ISBN
- 0-8194-0463-2
- Imprint Title
- Progress in high-temperature superconducting transistors and other devices
- Imprint Pagination
- 284 p.
- Journal Page Range
- p. 126-139.
Conference
- Title
- Society of Photo-Optical Instrumentation Engineers (SPIE) conference on progress in high temperature superconducting transistors and other devices.
- Dates
- 30 Sep - 5 Oct 1990.
- Place
- Santa Clara, CA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23056809
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; BOLOMETERS; DESIGN; FABRICATION; HIGH-TC SUPERCONDUCTORS; INFRARED RADIATION; INFRARED SPECTRA; PERFORMANCE; RESISTORS; SILICON; SUBSTRATES; SUPERCONDUCTING FILMS; SUPERCONDUCTIVITY; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; FILMS; MEASURING INSTRUMENTS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SPECTRA; SUPERCONDUCTORS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-9009173--.