Study on electrical properties and structure optimization of side-gate nanoscale vacuum channel transistor

In this paper, a nanoscale vacuum channel transistor (NVCT) with a side-gate structure is fabricated by standard electron beam lithography. The states of the proposed NVCTs could be effectively modulated by side-gate bias, exhibiting a drive current (>400 nA), low work voltage (<20 V) and high on/off current ratio (>10³). Moreover, we further optimize the shapes of the electrodes, demonstrating that the electric performance is closely related to the structure parameters. The side-gate NVCT offers an alternative method to fulfill the on-chip vacuum devices with high integration. (paper)