Published 2018 | Version v1
Journal article

Influence of MgO Barrier Quality on Spin-Transfer Torque in Magnetic Tunnel Junctions

  • 1. Indian Institute of Technology (IIT), Delhi (India). Dept. of Physics
  • 2. Argonne National Laboratory (ANL), Argonne, IL (United States). Materials Science Division
  • 3. KTH Royal Institute of Technology, Stockholm (Sweden). Materials and NanoPhysics, School of Engineering Sciences
  • 4. University of Gothenburg (Sweden). Dept. of Physics

Description

Here, we studied the bias dependence of spin transfer torque in the MgO-based magnetic tunnel junction using a field-modulated spin torque ferromagnetic resonance measurement technique for three devices with tunneling magnetoresistances (MRs) of 60%, 67%, and 73%, respectively. The devices with a lower MR ratio showed the presence of multiple modes, while the device with higher MR (73%) showed a single resonance mode. We found a lower out-of-plane torkance in our devices compared to the in-plane torkance. The out-of-plane torque is linear with applied bias, while the bias dependence of in-plane torque shows a strong dependence on the MR ratio and hence the barrier quality.

Availability note (English)

Available from https://www.osti.gov/pages/biblio/1419948; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
112
Journal Issue
2
Journal Page Range
vp.
ISSN
0003-6951