Structure determination of B4C and SiC thin films via synchrotron high-resolution diffraction
- 1. Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Materials Science and Engineering
- 2. Technology Assessment and Transfer, Annapolis, MD (United States)
- 3. Stanford Synchrotron Radiation Lab., Menlo Park, CA (United States)
Description
Thin films of B4C and SiC deposited by magnetron sputtering as components of multilayers have the potential to provide significant property improvements over current wear resistant coating technology. B4C and SiC have previously been found to be amorphous and possibly nanocrystalline under the deposition conditions used. This study reports results of synchrotron x-ray scattering experiments providing information on the degree of crystallinity, /strain, average density, and coordination number in 2000 angstrom films of these compounds on Si substrates. Radial distribution functions from B4C and SiC thin films were obtained and used to model the structure. Strain results are compared with Double Crystal x-ray Diffraction Topography (DCDT) results as a means for establishing a standard strain state
Additional details
Publishing Information
- Publisher
- Materials Research Society
- Imprint Place
- Warrendale, PA (United States)
- ISBN
- 1-55899-410-6
- Imprint Title
- Thin-films -- Stresses and mechanical properties 7
- Imprint Pagination
- 663 p.
- Series
- Materials Research Society symposium proceedings, Volume 505
- Journal Page Range
- p. 635-640
- ISSN
- 0272-9172
Conference
- Title
- 1997 fall meeting of the Materials Research Society
- Dates
- 1-5 Dec 1997
- Place
- Boston, MA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30021630
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BORON CARBIDES; CRYSTAL STRUCTURE; EXPERIMENTAL DATA; RESIDUAL STRESSES; SILICON CARBIDES; STRAINS; STRESS ANALYSIS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; DATA; DIFFRACTION; FILMS; INFORMATION; NUMERICAL DATA; SCATTERING; SILICON COMPOUNDS; STRESSES
Optional Information
- Funding organization
- Department of Defense, Washington, DC (United States); USDOE, Washington, DC (United States)
- Secondary number(s)
- CONF-971201--