Dynamic softening mechanism of 2 vol.% nano-sized SiC particle reinforced Al-12Si matrix composites during hot deformation
Creators
- 1. School of Materials Science and Engineering, Henan University of Science and Technology, Luoyang 471023 (China)
Description
The hot deformation behavior of the 2 vol.% nano-SiCp/Al-12Si composites prepared by powder metallurgy is complicated due to the simultaneous presence of nano-sized SiC particles and micro-sized precipitated Si particles. In this paper, the isothermal heat compression test and the transmission electron microscope analysis technique were used to analyze the softening mechanism of the 2 vol.% nano-SiCp/Al-12Si composites based on Z parameters and deformation temperature, and the nucleation mechanism of dynamic recrystallization of the 2 vol.% nano-SiCp/Al-12Si composites was analyzed. The results showed that, when LnZ > 55.02, T ≤ 753 K, the cross slip of dislocation was the main softening mechanism; when LnZ < 55.76, T ≥ 733 K, the softening mechanism mainly includes the cross slip, climbing of dislocation, and untangling of three-dimensional dislocation network; when lnZ ≤ 53.65, T ≥ 773 K, the dynamic recovery and dynamic recrystallization were the main softening mechanism of the composites. The dynamic recrystallization nucleation mechanisms of the 2 vol.% nano-SiCp/Al-12Si composites include the sub-grain combination nucleation and grain boundaries bulging nucleation. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/abafcfAdditional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 7
- Journal Issue
- 8
- Journal Page Range
- [7 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52099042
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEFORMATION; DISLOCATIONS; GRAIN BOUNDARIES; NANOSTRUCTURES; NUCLEATION; POWDER METALLURGY; PRECIPITATION; RECRYSTALLIZATION; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; LINE DEFECTS; METALLURGY; MICROSTRUCTURE; SEPARATION PROCESSES; SILICON COMPOUNDS