Published July 31, 2008 | Version v1
Journal article

Thermodynamic analysis and growth of ZrO2 by chloride chemical vapor deposition

  • 1. Materials Science and Technology Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831 (United States)
  • 2. University of Louisville, Louisville, KY 40292 (United States)
  • 3. Department of Chemical Engineering, University of Florida, Gainesville, FL 32611 (United States)

Description

Equilibrium calculations were used to optimize conditions for the chemical vapor deposition (CVD) of zirconia. The results showed zirconia formation would occur at high oxygen to zirconium atomic ratios (> 4), low hydrogen to carbon ratios (< 10), low pressures (< 105 Pa) and high temperatures (> 800 deg. C). Using these calculations as a guide, single-phase monoclinic zirconia coatings were deposited onto 2-cm diameter α-alumina substrates. The maximum growth rate achieved was 2.46 mg cm-2 h-1

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.11.020

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.11.020;
PII
S0040-6090(07)01874-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
18
Journal Page Range
p. 6133-6139
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.