Thermal annealing and gamma irradiation effects on the electrical properties of layered chalcogenide indium selenide thin films

Thin films of layered chalcogenide indium selenide have been prepared on glass substrate by thermal evaporation techniques. Electrical properties have been studied for as-grown, annealed and gamma irradiated films. The as-grown films show variation in resistivity ranging from 1.427 to 2.905 Ω-cm. Annealing increases the resistivity of these films is attributed to the replacement of In-In bonds with In-Se bonds. The carriers are p-type in the films at room temperature. To confirm the composition of these films, X-ray diffraction pattern of films has been also reported in this paper. XRD results showed that all the films have polycrystalline structure. These films have also been studied by exposing them to gamma radiation. Electric properties of these films have been investigated after a cumulative dose of 5.5 kGy. The degradation of material appears after gamma irradiation. (author)