Time dependent moessbauer spectroscopy and 119mTe implanted GaAs

A new type of time-dependent Moessbauer spectroscopy is proposed and realized on the basis of using two-step decay 119mTe → 119Sb → 119Sn. For the GaAs samples, implanted with dose of 110 keV 119mTe + 1015 stable Te/cm2 and annealed at 600 deg C, the relative intensities of various lines of the Moessbauer spectra have been measured as the functions of ξ a parameter being equal to φTe/φTot by definition ξ itself is determined from the annealing time ta, the initial time ti and the final time tf of the measurement of each spectrum. This kind of time-dependent Moessbauer spectroscopy can be used to investigated the change of the environment of the probe atoms in solid. The lines of Moessbauer spectra have been identified. The problem of the environment change of Te atom in GaAs after its decay into Sb and the mechanism of the non-substitutional Te have been discussed. The experimental results are also compared with previous data taken from Moessbauer spectra of 125Te and 129Te in GaAs