Pressure and doping driven metal-to-insulator transition in V2O3

In the V2O3 system chemical doping and application of pressure are usually assumed to have equivalent effects for the physics of the Mott Hubbard metal-to-insulator transition (MIT). Recent experimental evidence, however, shows that application of pressure on the Cr-doped V2O3 cannot repristinate the situation of the undoped compound. In order to understand the underlying physical mechanisms in the differently driven MITs we investigate optical and X-ray absorption spectra by means of the local density approximation and its merger with dynamical mean field theory (LDA+DMFT) as well as full multiplet cluster calculations.