Published August 1988
| Version v1
Journal article
Ion mixing, annealing processes and defect recombination in semiconductors under powerful ion beam irradiation
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Ионное перемешивание, процессы отжига и перестройка дефектов в полупроводниках под действием MIP
Publishing Information
- Journal Title
- Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
- Journal Volume
- 31
- Journal Issue
- 8
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 126
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20017250
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; COBALT SILICIDES; CRYSTALS; ION BEAMS; ION IMPLANTATION; NICKEL SILICIDES; PHYSICAL RADIATION EFFECTS; PLATINUM SILICIDES; RECRYSTALLIZATION; REVIEWS; SURFACES; TANTALUM SILICIDES; VACANCIES
- Descriptors DEC
- BEAMS; COBALT COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DOCUMENT TYPES; HEAT TREATMENTS; NICKEL COMPOUNDS; PLATINUM COMPOUNDS; POINT DEFECTS; RADIATION EFFECTS; SILICIDES; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- Short note.