Published September 2014
| Version v1
Journal article
A high speed real time photo-electron detection system with PIN photodiodes in 1-D array
- 1. Northwest Institute of Nuclear Technology, State Key Laboratory of Intense Pulse Radiation, Xi'an (China)
Description
A photo-electron detection system with 32 PIN photodiodes in 1D array has been designed and implemented within 16 cm width. The weak current signal of PIN photodiodes is firstly amplified for about 104 times, and then sampled at 75 MHz with 12 bits digital precision. The weak signal modulation circuit has a good response to signal with pulse width larger than 20 ns or lead edge longer than 10 ns. The signal processing module receives the 32-channel signal and caches them in real-time inside the FPGA. The data bandwidth of the signal processing module reaches up to 28.8 Gbps. (authors)
Additional details
Publishing Information
- Journal Title
- Nuclear Electronics and Detection Technology
- Journal Volume
- 34
- Journal Issue
- 9
- Journal Page Range
- p. 1110-1113, 1144
- ISSN
- 0258-0934
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 49079805
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ACCURACY; DATA PROCESSING; DESIGN; ELECTRIC CURRENTS; ELECTRON DETECTION; ELECTRONS; GATING CIRCUITS; LOGIC CIRCUITS; MHZ RANGE; MODULATION; PHOTODIODES; PULSES; SIGNALS; VELOCITY; WIDTH
- Descriptors DEC
- CHARGED PARTICLE DETECTION; CURRENTS; DETECTION; DIMENSIONS; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; FERMIONS; FREQUENCY RANGE; LEPTONS; PROCESSING; RADIATION DETECTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- 4 figs., 1 tab., 6 refs.