Structural and optical properties of ZnO films prepared by using ion beam deposition: effect of annealing
Creators
- 1. Chonbuk National University, Chonju (Korea, Republic of)
- 2. Korea Electronics Technology Institute, Seongnam (Korea, Republic of)
Description
ZnO films were deposited on AlN/Si (111) substrates at 500 .deg. C by using ion beam deposition. The as-deposited films were annealed for an hour in a mixture of air and oxygen gas at 700, 800, or 900 .deg. C. X-ray diffraction revealed that ZnO films were grown epitaxially on the AlN/Si (111) substrates and were oriented along the c-axis. The structural properties were improved by increasing the annealing temperature. The morphology of the ZnO films was changed dramatically after thermal annealing. The optical properties of the annealed ZnO films were examined by using photoluminescence (PL). The PL exhibited near-band-edge (NBE) emission and deep-level emission. The samples annealed at higher temperatures showed strong NBE emission lines, together with longitudinal optical phonon replicas of free exciton recombination.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 57
- Journal Issue
- 61
- Series
- 23 refs, 5 figs
- Journal Page Range
- p. 1867-1870
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 45012539
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM NITRIDES; ANNEALING; ENERGY BEAM DEPOSITION; FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHYSICAL PROPERTIES; SILICON; TESTING; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELEMENTS; EMISSION; HEAT TREATMENTS; LUMINESCENCE; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMIMETALS; SURFACE COATING; ZINC COMPOUNDS