Published 2009 | Version v1
Book Metadata-only

The use of laser produced plasma to ion implantation for modern semiconductor materials production

Creators

  • 1. Instytut Fizyki Plazmy i Laserowej Mikrosyntezy, ul. Hery 23, 01-497 Warsaw (Poland)

Description

no abstract available

Part of:
Programme and Abstracts

Additional details

Additional titles

Original title (Polish)
Zastosowanie plazmy laserowej do implantacji jonow w celu uzyskiwania nowoczesnych materialow polprzewodnikowych

Identifiers

URL
http://www.ptf.agh.edu.pl/XL-zjazd/doc/BoA.pdf;

Publishing Information

Publisher
Polskie Towarzystwo Fizyczne
Imprint Place
Cracow (Poland)
ISBN
978-83-924262-3-3
Imprint Title
Programme and Abstracts
Imprint Pagination
248 p.
Journal Page Range
p. S1.7.48

Conference

Title
40. General Meeting of Polish Physicists
Original Conference Title
40. Zjazd Fizykow Polskich
Dates
6-11 Sep 2009
Place
Cracow (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
40105975
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
CRYSTAL DOPING; ION IMPLANTATION; LABORATORY EQUIPMENT; LASER-PRODUCED PLASMA; SEMICONDUCTOR MATERIALS
Descriptors DEC
EQUIPMENT; MATERIALS; PLASMA

Optional Information

Notes
Imprint:Program i streszczenia