Published June 21, 2007
| Version v1
Journal article
Growth studies of (2 2 0), (2 0 0) and (1 1 1) oriented MgO films on Si (0 0 1) without buffer layer
Creators
- 1. Department of Physics, National University of Singapore, 117542 Singapore (Singapore)
- 2. Institute of Materials Research and Engineering, 117602 (Singapore)
Description
Selective growth of single-oriented (2 2 0), (2 0 0) and (1 1 1) MgO films on Si (1 0 0) substrates without buffer layers were obtained with a single crystal MgO target by pulsed laser deposition. All the films are very smooth and free of droplets, especially the surface of (2 2 0) and (2 0 0) oriented MgO films which are atomic-scale smooth. High resolution transmission electron microscopy was used to analyse the interfaces between MgO and Si under various conditions
Additional details
Identifiers
- DOI
- 10.1088/0022-3727/40/12/020;
- PII
- S0022-3727(07)44706-4;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 40
- Journal Issue
- 12
- Journal Page Range
- p. 3678-3682
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38085836
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BUFFERS; CRYSTAL GROWTH; DROPLETS; ENERGY BEAM DEPOSITION; FILMS; INTERFACES; LASER RADIATION; LAYERS; MAGNESIUM OXIDES; MONOCRYSTALS; PULSED IRRADIATION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CRYSTALS; DEPOSITION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; IRRADIATION; MAGNESIUM COMPOUNDS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PARTICLES; RADIATIONS; SURFACE COATING