Published June 21, 2007 | Version v1
Journal article

Growth studies of (2 2 0), (2 0 0) and (1 1 1) oriented MgO films on Si (0 0 1) without buffer layer

  • 1. Department of Physics, National University of Singapore, 117542 Singapore (Singapore)
  • 2. Institute of Materials Research and Engineering, 117602 (Singapore)

Description

Selective growth of single-oriented (2 2 0), (2 0 0) and (1 1 1) MgO films on Si (1 0 0) substrates without buffer layers were obtained with a single crystal MgO target by pulsed laser deposition. All the films are very smooth and free of droplets, especially the surface of (2 2 0) and (2 0 0) oriented MgO films which are atomic-scale smooth. High resolution transmission electron microscopy was used to analyse the interfaces between MgO and Si under various conditions

Additional details

Identifiers

DOI
10.1088/0022-3727/40/12/020;
PII
S0022-3727(07)44706-4;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
40
Journal Issue
12
Journal Page Range
p. 3678-3682
ISSN
0022-3727
CODEN
JPAPBE