Published June 1981
| Version v1
Journal article
Colour centres of ceramic dielectrica rich in alumina
Creators
- 1. Allunions-Forschungs- und Projektierungs-Institut fuer Elektrokeramik, Moscow (USSR)
Description
By influence of Co60 γ-radiation on ceramic dielectrica rich in alumina a formation of colour centres occurs up to radiation doses of about 258 C/kg. The centres exhibit the characteristic of impurities and were formed by changing the valence state of Cr3+, which is contained isomorphous in the corundum lattice. Influenced by radiation, Cr3+ changes in Cr2+ and Cr4+ and causes absorption in the ranges from 360 to 380 and 460 to 480 nm respectively. A thermal decomposition of colour centres is accompanied by thermoluminescence with a radiation spectrum in the field of the R-lines of chromium. (author)
Additional details
Additional titles
- Original title (German)
- Farbzentren in tonerdereichen keramischen Dielektrika
Publishing Information
- Journal Title
- Silikattechnik (Berlin)
- Journal Volume
- 32
- Journal Issue
- 6
- Series
- Silikattechnik (Berlin).
- Journal Page Range
- 174-176
- ISSN
- 0037-5233
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 13653242
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM OXIDES; ANNEALING; BORON OXIDES; CATIONS; CERAMICS; CHROMIUM COMPOUNDS; COLOR CENTERS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GAMMA RADIATION; HIGH TEMPERATURE; IMPURITIES; MEDIUM TEMPERATURE; OPACITY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RECOMBINATION; REFLECTION; SILICON OXIDES; TEMPERATURE DEPENDENCE; THERMOLUMINESCENCE; VALENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; BORON COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; LUMINESCENCE; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; RADIATIONS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VACANCIES