Nuclear electron scattering in the silicon monocrystal targets

Elastic and inelastic electron scattering with 800 MeV energy in monocrystal silicon targets is investigated. The energy spectra of scattered electrons have been measured by means of a magnetic spectrometer and a telescope of wire proportional chambers, the electron scattering angles varied from 14 to 17 deg. Measurements were carried out with silicon targets 17-120 μm in thickness with different orientations of crystals relatively to the beam direction. The results of measurements of elastic and inelastic scattering electron yields depending on the angle of electron incidence relatively to the crystal axis of the silicon target 120 μm in thickness are presented. It is marked that the effect of yield increase attenuates with increase of the target thickness