Tunable electronic and optical properties of new two-dimensional Blue P/MoSe2 van der Waals heterostructures with the potential for photocatalysis applications
Creators
- 1. School of Resources and Environmental Engineering, Shandong University of Technology, Zibo, 255000 (China)
Description
Highlights: • In the absence of strain, its energy band value is the largest. Under compress, its energy band value decreases slowly, but under stretch, its energy band value decreases to metallic properties. • The formation of the heterojunction can change the light performance very well. Under the visible light, the adsorption efficiency is greatly increased. • Under different strain, the charge density and the charge density difference change with the variation of the strain. Strain modulation is one of the most popular tuning methods for the electronic properties of low-dimensional systems. In the present work, by using first principles study, strain engineering is used to module the band gap transition of two novel van der Waals (vdW) heterostructures based on two-dimensional (2D) Blue P (Blue Phosphorene) supported on MoSe2, producing Blue P-MoSe2 systems. The Blue P-MoSe2 vdW heterostructures could withstand 8% of the applied tensile strain. The electronic structure of the Blue P-MoSe2 vdW heterostructures could be changed effectively under the tensile force. The band gap changed from direct to indirect under the strain and could be tuned in the range of 0.075–1.284 eV. At approximately −4% of the applied strain, there was a transition of the valence band maximum (VBM). A wider range of light absorption could be obtained under the strain. Furthermore, MoSe2 acts as an electron-donating layer in the Blue P-MoSe2 vdW heterostructure, and the potential drop across the interface can generate a large built-in electric field across the interface; this electric field plays a crucial role in preventing the recombination of photogenerated charges. Our results provide a prospect for the future applications of two-dimensional materials in electronic and optoelectronic devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.cplett.2021.138740Additional details
Identifiers
- DOI
- 10.1016/j.cplett.2021.138740;
- PII
- S0009261421004231;
Publishing Information
- Journal Title
- Chemical Physics Letters
- Journal Volume
- 777
- Journal Page Range
- vp.
- ISSN
- 0009-2614
- CODEN
- CHPLBC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54012172
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ABSORPTION; ADSORPTION; APPROXIMATIONS; CHARGE DENSITY; EFFICIENCY; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ELECTRONS; INTERFACES; LAYERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHOTOCATALYSIS; STRAINS; VAN DER WAALS FORCES
- Descriptors DEC
- CALCULATION METHODS; CATALYSIS; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; LEPTONS; OPTICAL EQUIPMENT; PHYSICAL PROPERTIES; SORPTION; TRANSDUCERS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.