Nano Scale studying of the effect of H implantation on the crystal lattice of SiC by atomic force microscopy and rutherford backscattering spectroscopy-channeling techniques

The effect of H+ -Implantation on the surface of the 6H-SiC crystal was investigated for sample implanted by 15 keV H+. Atomic Force Microscopy was used to study the surface morphology of implanted and unimplanted region of 6H-SiC crystal. A comparison of these two regions will show the surface roughness in the implanted region is greater than the unimplanted region. But, there is not any evidence of the effect of H implantation on the nano-scratches making after polishing. Also, Rutherford Backscattering Spectroscopy Channeling showed the damage layer produced by H implantation into crystal.