Positron implantation profiles in elemental and multilayer systems

Different Monte Carlo schemes for modeling positron and electron implantation in solids have been briefly reviewed. Results (mean depth, backscattered fraction, profile shapes) of the Monte Carlo schemes are compared with experimental data and each other. Qualitatively, results of the different Monte Carlo schemes are the same; the most significant difference is in the value of the mean implantation depth. The scaled profiles (for positron implantation in any material) generated by the different Monte Carlo schemes can be superimposed on a universal curve which can be appropriately parameterized. Shapes of the scaled profiles, and the mean depth parameters A and n are found to be material-dependent