The further study of characteristics of intra-modulated photo-sensor

Physical characteristics of a new kind of photodetectors, the intra-modulated photo-sensor, is analyzed in detail. The effects of the surface states and distribution of the hole quasi Fermi potential in the passage is taken into account. The coupling coefficient of the passage, the distribution of the hole concentration and quasi Fermi potential of the hole along the passage, and the optoelectronic characteristics are derived. It is in good agreement with the experimental measurement results