Published July 27, 1998 | Version v1
Journal article

Structural study of the charge-density-wave modulation of isoelectronically doped (Ta1-xNbxSe4)2I (0.1%<x<1.2%)

  • 1. Institut Laue-Langevin, 38042 Grenoble (France)
  • 2. Centre de Recherches sur les Tres Basses Temperatures, CNRS, 38042 Grenoble (France)
  • 3. Department of Physics, Brookhaven National Laboratory, Upton, NY 11973-5000 (United States)
  • 4. Laboratoire Leon Brillouin, Centre d'Etude de Saclay, 91191 Gif-sur-Yvette (France)
  • 5. Institut de Physique Appliquee, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne (Switzerland)

Description

We present a neutron and x-ray diffraction study of the charge-density-wave modulation wave vector of (TaSe4)2I with isoelectronic Nb doping. In contrast to other charge-density-wave materials, like NbSe3 and K0.3MoO3, Nb-doped (TaSe4)2I reveals a change of the modulation wave vector with doping. This change corresponds to a shift of the satellite position towards the Brillouin-zone centre on a nominal doping level of 0.8% Nb being exceeded. On a 1.2% level of Nb doping being reached, strong satellite broadening is observed, indicating the onset of short-range charge-density-wave correlation. A recently derived phenomenological model of the phase transition in (TaSe4)2I, which accounts for changes in the modulation wave vector upon doping, is briefly discussed. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
10
Journal Issue
29
Journal Page Range
p. 6505-6514
ISSN
0953-8984