Published 2019 | Version v1
Journal article

Micro alloying of SiC by radioisotope

  • 1. Samara University, Samara (Russian Federation)

Description

The endotaxia is the process of growth of one crystal structure inside the volume of another. In this case we are talking about the formation of the Silicon Carbide film in the Silicon substrate. The Silicon substrate is placed in the gas chamber. The sample is exposed to the stream of methane gas CH4 at temperature of 1360 - 1380 C and at normal pressure. Moreover, gas contains both the stable Carbon isotope C12 and the radioactive Carbon isotope C14, and hydrogen H2 in the gas acts as a carrier of Carbon.

Availability note (English)

Available from https://www.epj-conferences.org/articles/epjconf/pdf/2019/27/epjconf_qfthep2019_02013.pdf; https://doaj.org/article/22ed259491684cfab4d15908b46a8ace

Additional details

Publishing Information

Journal Title
EPJ. Web of Conferences
Journal Volume
222
Journal Page Range
vp.
ISSN
2100-014X

Conference

Title
24. International Workshop on High Energy Physics and Quantum Field Theory
Acronym
QAFTHEP 2019
Dates
22-29 Sep 2019
Place
Sochi (Russian Federation)