Published 2000 | Version v1
Miscellaneous Metadata-only

Investigation of ion implantation into modified silicon surface for fabrication of p-n junctions for photovoltaic devices

Creators

  • 1. Institute of Electron Technology, Warsaw (Poland)
  • 2. Institute of Electronic Materials Technology, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000

Additional details

Publishing Information

Imprint Title
Abstracts of 3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
Imprint Pagination
120 p.
Journal Page Range
p. 102

Conference

Title
3. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2000
Dates
12-15 Jun 2000
Place
Kazimierz Dolny (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
32030053
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
AMORPHOUS STATE; ANNEALING; ETCHING; FLUORINE IONS; GERMANIUM IONS; ION IMPLANTATION; MICROELECTRONICS; P-N JUNCTIONS; PHOTOVOLTAIC CELLS; PLASMA; POROUS MATERIALS; SILICON
Descriptors DEC
CHARGED PARTICLES; DIRECT ENERGY CONVERTERS; ELEMENTS; HEAT TREATMENTS; IONS; MATERIALS; PHOTOELECTRIC CELLS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SURFACE FINISHING

Optional Information