Variation of n-InSb static conduction in conditions of sub-millimeter-wave ESR

The effect of change in the sample statical conductivity at EPR, δσsub(EPR), within 0.55-2 mm wave length range has been observed in n-InSb with different impurity concentration n=5x109-8x1015 cm-3 at 1.8-12 K. It is found that the signals detected in the region of impurity conductivity are of the same intensity order with the signals observed for charge carriers in the conductivity bond. Evaluations of the (δσ/σ)sub(EPR) value for free electrons according to the model of mobility growth at SHF power absorption and for localized electrons basing on the earlier developed models of photoconductivity by impurities are carried out