Published May 10, 2010
| Version v1
Journal article
p-type conduction in sputtered indium oxide films
- 1. Instituto de Ciencia de Materiales de Aragon and Departamento de Fisica de la Materia Condensada, CSIC-Universidad de Zaragoza, 50009 Zaragoza (Spain)
- 2. Departamento de Fisica Aplicada, Universidad de Zaragoza, 50009 Zaragoza (Spain)
Description
We report p-type conductivity in intrinsic indium oxide (IO) films deposited by magnetron sputtering on fused quartz substrates under oxygen-rich ambient. Highly oriented (111) films were studied by x-ray diffraction, optical absorption, and Hall effect measurements. We fabricated p-n homojunctions on these films.
Additional details
Identifiers
- DOI
- 10.1063/1.3430035;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 96
- Journal Issue
- 19
- Journal Page Range
- p. 192108-192108.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41078639
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; CRYSTAL GROWTH; DEPOSITION; ELECTRIC CONDUCTIVITY; HALL EFFECT; INDIUM OXIDES; MAGNETRONS; OXYGEN; P-N JUNCTIONS; QUARTZ; SEMICONDUCTOR MATERIALS; SPUTTERING; THIN FILMS; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; INDIUM COMPOUNDS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SORPTION; SPECTRA
Optional Information
- Notes
- (c) 2010 American Institute of Physics