Published October 15, 2008
| Version v1
Journal article
Annealing of Al-Si alloys after equal-channel angular pressing
- 1. Norwegian University of Science and Technology, Department of Materials Science and Engineering, N-7491 Trondheim (Norway)
- 2. Hydro Aluminium AS, R and D Materials Technology, 6600 Sunndalsora (Norway)
Description
The annealing response after equal-channel angular pressing (ECAP) of three different Al-Si alloys has been investigated. The alloys were deformed at room temperature by ECAP up to four passes and the microstructural changes after deformation and annealing were studied by light and electron microscopy. The influence of ECAP strain, particle fractions, and annealing temperatures on microstructure and hardness evolutions of the ultra-fine grained materials was examined. High particle contents seemed to enhance recrystallization kinetics. Also, a change from continuous grain coarsening to discontinuous recrystallization occurred at about 200-250 deg. C
Availability note (English)
Available from http://dx.doi.org/10.1016/j.msea.2007.05.127Additional details
Identifiers
- DOI
- 10.1016/j.msea.2007.05.127;
- PII
- S0921-5093(07)01941-7;
Publishing Information
- Journal Title
- Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
- Journal Volume
- 493
- Journal Issue
- 1-2
- Journal Page Range
- p. 202-206
- ISSN
- 0921-5093
- CODEN
- MSAPE3
Conference
- Title
- Advances in microstructure-based modeling and characterization of deformation microstructures
- Acronym
- TMS annual meeting 2007
- Dates
- 25 Feb - 1 Mar 2007
- Place
- Orlando, FL (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40025777
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; DEFORMATION; ELECTRON MICROSCOPY; GRAIN GROWTH; HARDNESS; KINETICS; MICROSTRUCTURE; PARTICLES; PRESSING; RECRYSTALLIZATION; SILICON ALLOYS; STRAINS; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- ALLOYS; FABRICATION; HEAT TREATMENTS; MATERIALS WORKING; MECHANICAL PROPERTIES; MICROSCOPY; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.