Published 2017 | Version v1
Journal article

Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs

  • 1. Institute for Spectroscopy RAS, 108840 Moscow, Troitsk (Russian Federation)
  • 2. Lebedev Physical Institute RAS, 119991 Moscow (Russian Federation)
  • 3. Institute of Physics, Polish Academy of Sciences, PL-02668 Warsaw (Poland)

Description

Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied. Using dispersion analysis of reflectivity spectra plasmon and phonon parameters for the samples under study were obtained.

Availability note (English)

Available from http://www.epj-conferences.org/articles/epjconf/pdf/2017/01/epjconf_spectro2017_03059.pdf; https://doaj.org/article/502ce545c5144889baf697c0f1ebed05; http://dx.doi.org/10.1051/epjconf/201713203059

Additional details

Publishing Information

Journal Title
EPJ. Web of Conferences
Journal Volume
132
Journal Page Range
03059 p.
ISSN
2100-014X

Conference

Title
25. Congress on Spectroscopy
Dates
3-7 Oct 2016
Place
Troitsk, Moscow (Russian Federation)

Optional Information

Copyright
Copyright (c) 2017 The Authors. Published by EDP Sciences