Broadband near-IR emission and temperature dependence in Er/Tm co-doped Bi2O3-SiO2-Ga2O3 glasses
- 1. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China) and Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)
- 2. Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)
- 3. Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 (China)
- 4. SCHOTT Glass Technologies (Suzhou) Co., Ltd, Suzhou 215009 (China)
Description
The broadband near-IR emission has been investigated in a series of Er/Tm co-doped Bi2O3-SiO2-Ga2O3 (BSG) glasses with 800 nm laser diode as an excitation source. A broadband emission extending from 1350 to 1650 nm with a full width at half maximum (FWHM) around 165 nm is obtained in 0.2 wt% Er2O3 and 1.0 wt% Tm2O3 co-doped BSG glass. The fluorescence decay curves of glasses are measured and maximum energy transfer efficiency from Er3+ to Tm3+ reaches 71% when Tm3+ concentration is 1.0 wt%. The temperature dependence of the broadband emission spectra in Er3+-Tm3+ co-doped BSG glass is also recorded to further understand the energy-transfer processes between Er3+ and Tm3+. The present work suggests that Er/Tm co-doped BSG glasses can be a potential candidate for broadband integrated amplifier.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2012.09.002Additional details
Identifiers
- DOI
- 10.1016/j.physb.2012.09.002;
- PII
- S0921-4526(12)00839-3;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 407
- Journal Issue
- 24
- Journal Page Range
- p. 4622-4626
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44041611
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLIFIERS; BISMUTH OXIDES; DOPED MATERIALS; EFFICIENCY; EMISSION SPECTRA; ENERGY TRANSFER; ERBIUM ADDITIONS; ERBIUM OXIDES; EXCITATION; FLUORESCENCE; GALLIUM OXIDES; GLASS; METALLIC GLASSES; SILICON OXIDES; TEMPERATURE DEPENDENCE; THULIUM ADDITIONS; THULIUM OXIDES
- Descriptors DEC
- ALLOYS; BISMUTH COMPOUNDS; CHALCOGENIDES; ELECTRONIC EQUIPMENT; EMISSION; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; ERBIUM ALLOYS; ERBIUM COMPOUNDS; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RARE EARTH ADDITIONS; RARE EARTH ALLOYS; RARE EARTH COMPOUNDS; SILICON COMPOUNDS; SPECTRA; THULIUM ALLOYS; THULIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.