Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O3(111) substrate
Creators
- 1. Beijing University of Technology, 100 Pingle Yuan, Chao Yang District, Beijing 100022 (China)
- 2. Institute of Physics, The Chinese Academy of Sciences and National Center for Nano-Science and Technology, Beijing 100080 (China)
Description
ZnO/(La,Sr)(Al,Ta)O3(LSAT) heterointerface is engineered to control the crystallographic orientation of ZnO films grown by plasmas-assisted molecular beam epitaxy. Lattice-matched in-plane alignment of [1120]ZnO parallel [112]LSAT has been realized using Mg modification of the substrate surface, which is confirmed with in situ reflection high-energy electron diffraction observation, and ex situ characterization of x-ray diffraction and transmission electron microscopy. The low-temperature deposition and high-temperature treatment of the Mg layer on the oxygen-terminated LSAT(111) surface results in selective nucleation of a MgO interface layer which serves as a template for single-domain epitaxy of ZnO. Oxygen-polar ZnO film with an atomically smooth surface has been obtained, which is favorable for metal-ZnO Schottky contact with high barrier height
Additional details
Identifiers
- DOI
- 10.1063/1.2130523;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 20
- Journal Page Range
- p. 202107-202107.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37021627
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINATES; CRYSTAL GROWTH; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; INTERFACES; LANTHANUM COMPOUNDS; LAYERS; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; NUCLEATION; OXYGEN; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; STRONTIUM COMPOUNDS; SUBSTRATES; SURFACE TREATMENTS; TANTALATES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON MICROSCOPY; ELEMENTS; EPITAXY; MAGNESIUM COMPOUNDS; MATERIALS; MICROSCOPY; NONMETALS; OXIDES; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2005 American Institute of Physics