Published March 2006 | Version v1
Journal article Metadata-only

Influence of growth temperature conditions on electric properties of CdTe:Ge crystals

Creators

  • 1. Ukrainian State University of Water Handling Facilities and Nature Management, 11 Soborna Str., Rivne 33000 (Ukraine)
  • 2. Department of Physics of Semiconductors and Nanostructures, Chernivtsi National University, 2 Kotsyubinsky Str., Chernivtsi 58012 (Ukraine)

Description

A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post-growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high temperatures. GeTe defect is an acceptor defining the electric and photoelectric properties at T≤290 K. GeCd donors and deep (GeCdVCd)/ acceptors are generated in lesser amount. Long-term ingot thermal treatment at T<1090 K causes germanium atom relocalization chiefly into cadmium sublattice. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200564666

Additional details

Identifiers

DOI
10.1002/pssc.200564666;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
3
Journal Issue
4
Journal Page Range
p. 750-753
ISSN
1610-1634

Conference

Title
12. international conference on II-VI compounds
Dates
12-16 Sep 2005
Place
Warsaw (Poland)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37044014
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CADMIUM TELLURIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL LATTICES; DOPED MATERIALS; ELECTRON MOBILITY; GERMANIUM ADDITIONS; IMPURITIES; LATTICE VIBRATIONS; N-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 1000-4000 K
Descriptors DEC
ALLOYS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL STRUCTURE; GERMANIUM ALLOYS; HEAT TREATMENTS; MATERIALS; MOBILITY; PARTICLE MOBILITY; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
With 2 figs., 8 refs.. SICI: 1610-1634(200603)3:4<750::AID-PSSC200564666>3.0.TX;2-5