Published May 1988
| Version v1
Journal article
Enthalpy of formation of point defects in binary and ternary semiconductors
Description
Enthalpies of ΔHvi vacancy formation in compounds of A3B5 and A2B6 type were evaluated using relationships between H microhardness, surface energy of E111s facet and M molecular mass of the compounds. The dependence of formation enthalpy of vacancies in isovalent solid solutions of ANB8-N(A3B5, A2B6) semiconductors was investigated. Possibility of using phenomenological method for evaluating enthalpies of vacancy formation in the case of ternary diamond-like semiconductors was shown. Evaluation of formation enthalpies of ΔHvi vacancies of all A2B4C5 type compounds on the base of nitrogen, phosphorus, arsenic, antimony, synthesized previously was conducted
Additional details
Additional titles
- Original title (Russian)
- Энтальпии образования точечных дефектов в бинарных и тройных полупроводниках
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy
- Journal Volume
- 24
- Journal Issue
- 5
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 735-742
- ISSN
- 0002-337X
- CODEN
- IVNMA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20011178
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM PHOSPHIDES; CADMIUM SILICATES; CADMIUM TELLURIDES; FORMATION HEAT; INDIUM PHOSPHIDES; MERCURY TELLURIDES; MICROHARDNESS; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; SURFACE ENERGY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISPERSIONS; ENTHALPY; HARDNESS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; MATERIALS; MECHANICAL PROPERTIES; MERCURY COMPOUNDS; MIXTURES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; REACTION HEAT; SILICATES; SILICON COMPOUNDS; SOLUTIONS; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES