Variations of the energy spectra of the impurity atoms in InSb under 4.2 K gamma irradiation

The defect-production process in InSb under gamma irradiation at 4.2 K has been investigated. The data are compared with those obtained under gamma irradiation at 77 K. It has been shown that in both cases the irradiation leads to the transformation of the energy spectra of the impurity atoms, and the results confirm the conclusion that in InSb, just as in Si and Ge, either the long-range interaction between the primary defects and the impurity atoms exists, or at least one component of a Frenkel pair is mobile at a temperature as low as 4.2 K. (author)