Published June 3, 2009 | Version v1
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Electronic and structural characterizations of unreconstructed {0001} surfaces and the growth of graphene overlayers

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Description

The present work is focused on the characterization of the clean unreconstructed SiC{0001} surfaces and the growth of graphene overlayers thereon. Electronic properties of SiC surfaces and their interfaces with graphene and few layer graphene films were investigated by means of angle resolved photoelectron spectroscopy, X-ray photoelectron spectroscopy and low energy electron diffraction. Structural characterizations of the epitaxial graphene films grown on SiC were carried out by atomic force microscopy and low energy electron microscopy. Supplementary data was obtained by scanning tunneling microscopy. (orig.)

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Additional details

Publishing Information

Imprint Pagination
146 p.
Report number
INIS-DE--0760

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40091270
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Thesis
Descriptors DEI
ATOMIC FORCE MICROSCOPY; ELECTRON DIFFRACTION; ELECTRON SPECTRA; ELECTRONIC STRUCTURE; EMISSION SPECTRA; EPITAXY; GRAPHITE; INTERFACES; LAYERS; MORPHOLOGY; PHOTOELECTRIC EMISSION; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDES; SUBSTRATES; SURFACES; THIN FILMS
Descriptors DEC
CARBIDES; CARBON; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRON EMISSION; ELEMENTS; EMISSION; FILMS; MICROSCOPY; MINERALS; NONMETALS; PHOTOELECTRIC EFFECT; SCATTERING; SILICON COMPOUNDS; SPECTRA