Electrochemical study of novel nanostructured In2S3 and its effect on oxidative damage to DNA purine bases
Creators
- 1. Process Chemistry Centre, Laboratory of Analytical Chemistry, Åbo Akademi University, FI-20500 Turku-Åbo (Finland)
- 2. Department of Chemistry, College of Science, Sultan Qaboos University, P.O. Box 36, Al-Khoudh, P.C. 123, Muscat (Oman)
- 3. Department of Chemical Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)
- 4. Department of Physics, Government College for Women, Kumbakonam 612 001, Tamil Nadu (India)
- 5. Institute of Analytical Chemistry, Slovak University of Technology in Bratislava, 81237 Bratislava (Slovakia)
- 6. Laboratory of Green Chemistry, LUT Savo Sustainable Technologies, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland)
Description
Highlights: ► One-step solution growth in absence of surfactants was used for nano-In2S3 synthesis. ► Nano-In2S3 shows excellent semiconducting properties. ► Nano-In2S3 increases the oxidation stress in DNA. -- Abstract: Novel nanostructured In2S3 was synthesized using a one-step solution growth approach in various indium nitrate to thioacetamide ratio and in absence of surfactants. Morphology studies showed the flower-like structure of the nanomaterials obtained. For the electrochemical study, In2S3 nanomaterials were immobilized at the surface of the glassy carbon electrode. Modified glassy carbon electrodes were then characterized by cyclic voltammetry of the three redox systems: [Ru(NH3)6]3+/[Ru(NH3)6]2+, [Fe(CN)6]3−/[Fe(CN)6]4−, and hydroquinone/quinone. The calculated standard electron transfer rate constants were in agreement with those calculated from electrochemical impedance measurements. Electrochemical impedance spectra measured at different potential values were used to study semiconducting properties of In2S3 samples. Analysis showed n-type semiconductor behavior for all In2S3 samples. The donor density (∼10−18 cm−3) and flat band potential (∼−0.8 V) were in agreement with those reported for indium contained semiconductors. As the semiconducting and photocatalytic properties are related to production of the free radicals able to damage DNA, the effect of In2S3 exposed to UV radiation on DNA bases was studied. In2S3 nanomaterials in the dispersion medium enhanced the production of free radicals and the oxidation stress and caused significant damage to DNA bases. Our results show that In2S3 nanomaterials exhibit good semiconducting properties and are also efficient photocatalysts
Availability note (English)
Available from http://dx.doi.org/10.1016/j.electacta.2012.12.132Additional details
Identifiers
- DOI
- 10.1016/j.electacta.2012.12.132;
- PII
- S0013-4686(13)00012-1;
Publishing Information
- Journal Title
- Electrochimica Acta
- Journal Volume
- 92
- Journal Page Range
- p. 124-131
- ISSN
- 0013-4686
- CODEN
- ELCAAV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45059769
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- AMMONIA; BENZOQUINONES; DENSITY; DNA; ELECTRON TRANSFER; INDIUM NITRATES; INDIUM SULFIDES; NANOSTRUCTURES; OXIDATION; PHOTOCATALYSIS; REACTION KINETICS; SEMICONDUCTOR MATERIALS; STRESSES; SURFACTANTS; SYNTHESIS; VOLTAMETRY
- Descriptors DEC
- AROMATICS; CATALYSIS; CHALCOGENIDES; CHEMICAL REACTIONS; HYDRIDES; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; KINETICS; MATERIALS; NITRATES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NUCLEIC ACIDS; ORGANIC COMPOUNDS; ORGANIC OXYGEN COMPOUNDS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUINONES; SULFIDES; SULFUR COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.