Published March 1, 2013 | Version v1
Journal article

Electrochemical study of novel nanostructured In2S3 and its effect on oxidative damage to DNA purine bases

  • 1. Process Chemistry Centre, Laboratory of Analytical Chemistry, Åbo Akademi University, FI-20500 Turku-Åbo (Finland)
  • 2. Department of Chemistry, College of Science, Sultan Qaboos University, P.O. Box 36, Al-Khoudh, P.C. 123, Muscat (Oman)
  • 3. Department of Chemical Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of)
  • 4. Department of Physics, Government College for Women, Kumbakonam 612 001, Tamil Nadu (India)
  • 5. Institute of Analytical Chemistry, Slovak University of Technology in Bratislava, 81237 Bratislava (Slovakia)
  • 6. Laboratory of Green Chemistry, LUT Savo Sustainable Technologies, Lappeenranta University of Technology, Sammonkatu 12, FI-50130 Mikkeli (Finland)

Description

Highlights: ► One-step solution growth in absence of surfactants was used for nano-In2S3 synthesis. ► Nano-In2S3 shows excellent semiconducting properties. ► Nano-In2S3 increases the oxidation stress in DNA. -- Abstract: Novel nanostructured In2S3 was synthesized using a one-step solution growth approach in various indium nitrate to thioacetamide ratio and in absence of surfactants. Morphology studies showed the flower-like structure of the nanomaterials obtained. For the electrochemical study, In2S3 nanomaterials were immobilized at the surface of the glassy carbon electrode. Modified glassy carbon electrodes were then characterized by cyclic voltammetry of the three redox systems: [Ru(NH3)6]3+/[Ru(NH3)6]2+, [Fe(CN)6]3−/[Fe(CN)6]4−, and hydroquinone/quinone. The calculated standard electron transfer rate constants were in agreement with those calculated from electrochemical impedance measurements. Electrochemical impedance spectra measured at different potential values were used to study semiconducting properties of In2S3 samples. Analysis showed n-type semiconductor behavior for all In2S3 samples. The donor density (∼10−18 cm−3) and flat band potential (∼−0.8 V) were in agreement with those reported for indium contained semiconductors. As the semiconducting and photocatalytic properties are related to production of the free radicals able to damage DNA, the effect of In2S3 exposed to UV radiation on DNA bases was studied. In2S3 nanomaterials in the dispersion medium enhanced the production of free radicals and the oxidation stress and caused significant damage to DNA bases. Our results show that In2S3 nanomaterials exhibit good semiconducting properties and are also efficient photocatalysts

Availability note (English)

Available from http://dx.doi.org/10.1016/j.electacta.2012.12.132

Additional details

Identifiers

DOI
10.1016/j.electacta.2012.12.132;
PII
S0013-4686(13)00012-1;

Publishing Information

Journal Title
Electrochimica Acta
Journal Volume
92
Journal Page Range
p. 124-131
ISSN
0013-4686
CODEN
ELCAAV

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.