Published March 2012
| Version v1
Journal article
Temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si ohmic contacts subjected to microwave irradiation
Creators
- 1. National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
- 2. State Enterprise Research Institute "Orion" (Ukraine)
Description
Based on a theoretical analysis of the temperature dependence of the contact resistance Rc for an Au-Ti-Pd2Si-n+-Si ohmic contact, a current-transfer mechanism explaining the experimentally observed increase in Rc in the temperature range 100–380 K is proposed. It is shown that microwave treatment of such contacts results in a decrease in the spread of Rc over the wafer and a decrease in the value of Rc whilst retaining an increase in Rc in the temperatures range 100–380 K.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 46
- Journal Issue
- 3
- Journal Page Range
- p. 330-333
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129402
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- IRRADIATION; MICROWAVE RADIATION; PALLADIUM SILICIDES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; PALLADIUM COMPOUNDS; RADIATIONS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Pleiades Publishing, Ltd.