Published October 15, 2012 | Version v1
Journal article

Copper zinc tin sulfide layers prepared from solution processable metal dithiocarbamate precursors

  • 1. Christian Doppler Laboratory for Nanocomposite Solar Cells, Graz University of Technology and NanoTecCenter Weiz, Forschungsgesellschaft mbH (Austria)
  • 2. Institute for Chemistry and Technology of Materials, Graz University of Technology, Stremayrgasse 9, 8010 Graz (Austria)
  • 3. Institute for Electron Microscopy and Fine Structure Research, Graz University of Technology, Steyrergasse 17, 8010 Graz (Austria)
  • 4. Chair of Chemistry of Polymeric Materials, University of Leoben, Otto Glöckel-Strasse 2, 8700 Leoben (Austria)
  • 5. Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, 8010 Graz (Austria)

Description

In this contribution we present a solution based route toward copper zinc tin sulfide – CZTS – layers using metal dithiocarbamate precursors. We focus on the synthesis of the precursor materials as well as on the fabrication of thin CZTS layers at low temperatures of 350 °C and their characterization. Powder X-ray diffraction measurements show that a precursor solution containing an excess of the zinc precursor, compared to the Cu and Sn precursors, has to be used to obtain CZTS films without secondary phases. Thus, the prepared films are Zn-rich, which is beneficial for solar cell applications. Raman as well as X-ray photoelectron spectroscopy studies confirm the formation of CTZS. No clear evidence for free ZnS has been found. Electron microscopy shows agglomerates of 10 nm-sized crystallites forming spherical particles with a diameter between 50 nm and 400 nm. The prepared films possess high optical absorption (>1.104 cm−1) and an optical band gap of approximately 1.6 eV. Highlights: ► CZTS layers are prepared from metal dithiocarbamate precursor solu-tions. ► No additional sulfur sources or capping agents are necessary. ► Prepared CZTS layers are zinc rich. ► CZTS layers show a high absorption coefficient and a band gap of 1.6 eV.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.matchemphys.2012.07.030

Additional details

Identifiers

DOI
10.1016/j.matchemphys.2012.07.030;
PII
S0254-0584(12)00678-5;

Publishing Information

Journal Title
Materials Chemistry and Physics
Journal Volume
136
Journal Issue
2-3
Journal Page Range
p. 582-588
ISSN
0254-0584
CODEN
MCHPDR

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.