Power Conversion Efficiency of AlGaAs/GaAs Schottky Diode for Low-Power On-Chip Rectenna Device Application
Creators
- 1. Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai Johor Malaysia (Malaysia)
- 2. Material Innovations and Nanoelectronics Research Group, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai (Malaysia)
- 3. Telekom Research and Development, TM Innovation Centre, 63000 Cyberjaya (Malaysia)
Description
A Schottky diode has been designed and fabricated on n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences of Schottky barrier height from theoretical value are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are well rectified by the fabricated Schottky diodes and stable DC output voltage is obtained. Power conversion efficiency up to 50% is obtained at 1 GHz with series connection between diode and load. The fabricated the n-AlGaAs/GaAs Schottky diode provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
Additional details
Identifiers
- DOI
- 10.1063/1.3586982;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1341
- Journal Issue
- 1
- Journal Page Range
- p. 193-196
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 2010 international conference on enabling science and nanotechnology
- Acronym
- Escinano2010
- Dates
- 1-3 Dec 2010
- Place
- Kuala Lumpur (Malaysia)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42104727
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; CONVERSION; EFFICIENCY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ELECTRONS; FABRICATION; GALLIUM ARSENIDES; GHZ RANGE; N-TYPE CONDUCTORS; SCHOTTKY BARRIER DIODES; TRANSISTORS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; FREQUENCY RANGE; GALLIUM COMPOUNDS; LEPTONS; MATERIALS; MOBILITY; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- (c) 2011 American Institute of Physics