Published August 1983 | Version v1
Journal article Metadata-only

Study of soft errors in MOS RAM by α-rays, 2

Creators

  • 1. Miyazaki Univ. (Japan). Faculty of Engineering

Description

Recent investigations have found low levels of alpha particles emitted from the immidiate chip environment to be responsible for soft errors in MOS dynamic RAM's. We have investigated this problem in systems which we made. And we got the data which indicate dependence of soft error on supply voltage. (author)

Additional details

Additional titles

Subtitle (English)
Study of the measurement systems of soft errors in MOS RAM

Publishing Information

Journal Title
Miyazaki Daigaku Kogakubu Kenkyu Hokoku
Journal Issue
no.29
Series
Miyazaki Daigaku Kogakubu Kenkyu Hokoku.
ISSN
0540-4932

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
15070507
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ALPHA BEAMS; COUNTING RATES; ELECTRIC POTENTIAL; ENERGY DEPENDENCE; ERRORS; PHYSICAL RADIATION EFFECTS; PULSES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR STORAGE DEVICES; SIGNALS; SILICON; THORIUM; URANIUM
Descriptors DEC
ACTINIDES; BEAMS; ELEMENTS; HELIUM 4 BEAMS; ION BEAMS; MATERIALS; MEMORY DEVICES; METALS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS