Published June 2010 | Version v1
Journal article

Fully coupled and semi-coupled piezoelectric models on the optical properties of InGaN quantum dots

  • 1. Institute of Applied Mechanics, National Taiwan University, No 1 Sec. 4, Roosevelt Road, Taipei, 10672, Taiwan (China)

Description

This paper investigates the differences between the fully coupled and the semi-coupled piezoelectric models for determining strain fields, piezoelectric potentials and optical properties of wurtzite InGaN quantum dots (QDs) in three different shapes. Through the calculations, we show that the relative difference of the x-component strain inside the dot remains almost unchanged regardless of the shapes and the sizes of the dot. On the other hand, a large relative difference for the z-component strain is obtained with the use of the semi-coupled model. We also find that the semi-coupled model clearly overestimates the piezoelectric potential, and the transition energy difference increased with increases in the dot size and indium composition. Consequently, the semi-coupled model causes a great amount of distortion in predicting the optical properties of InGaN QDs. It is thus evident that the fully coupled model for calculating the electromechanical fields and optical properties of InGaN QDs may be more appropriate according to our numerical examples

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/25/6/065005

Additional details

Identifiers

DOI
10.1088/0268-1242/25/6/065005;
PII
S0268-1242(10)48681-2;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
25
Journal Issue
6
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45010833
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
OPTICAL PROPERTIES; PIEZOELECTRICITY; QUANTUM DOTS; STRAINS
Descriptors DEC
ELECTRICITY; NANOSTRUCTURES; PHYSICAL PROPERTIES